课题组本科生高远基在SCI期刊《Nano Research》上发表文章

祝贺课题组成员高远基在SCI期刊《Nano Research》上发表文章

   近日，课题组成员高远基同学国际权威纳米物理期刊Nano Research(SCI一区，影响因子：8.515)上发表题为“Valleytronics in transition metal dichalcogenides materials(基于过渡金属硫化物材料的谷电子学)”的综述论文。值得一提的是，这是课题组本科生发表的第二篇高水平SCI论文。

     布洛赫电子的第一布里渊区中的谷自由度为信息存储和量子计算提供了一种崭新的方法。破缺的空间反演对称性和时间反演对称性的存在赋予了布洛赫电子非零的贝里曲率和轨道磁矩，由此支配谷电子学中的谷霍尔效应和光学选择定则。此外，因为新型的过渡金属二硫化物(TMD)材料具有新颖的结构、光子和电子特性，尤其是单层中的直接带隙和破缺的反转对称性，使其成为天然的谷电子学研究的理想候选。然而，过渡金属硫化物谷间弛豫机制仍然模糊不清，并且谷操纵方法较为复杂，这些因素严重阻碍了其在谷电子学器件中的应用。在这篇综述中，我们系统地阐述了基于过渡金属硫化物谷自由度的基本属性和调控策略(光学，电学，磁学和机械调节），并总结了基于过渡金属硫化物的谷电子学器件的最新进展。此外，我们还指明了谷电子学当前发展面临的挑战并深度展望了谷电子学研究的未来方向。该工作有助于理解过渡金属硫化物材料中的谷激子的微观特性，认清谷电子学目前的发展现状，把握谷电子学研究的发展方向，更有利于基于谷电子学的信息存储和量子计算器件的实现。

    高远基在大二时加入课题组，开展文献调研收集、数据分析和处理、科技论文撰写等工作，历时10个月。本论文是目前物理与电子学院本科生发表SCI论文中影响因子最高的一篇。目前高远基另外2篇SCI论文正在审稿中，有望在本科毕业前实现3-4篇高水平SCI论文。本工作得到了国家自然科学基金、湖南省重点研发基金、中南大学创新驱动计划和中南大学青年创新团队项目的大力支持。

论文链接：http://www.thenanoresearch.com/work_just.asp

Comments:

• Valleytronics is a subfield of spintronics that focuses on utilizing the valley degree of freedom of electrons in two-dimensional materials such as transition metal dichalcogenides (TMDCs). TMDCs have been found to have unique optical and electronic properties that make them ideal candidates for valleytronics applications. The two-dimensional structure of TMDCs, combined with their ability to produce valleys in their energy band structure, opens up new avenues for the manipulation of electron spin and charge. This, in turn, has the potential to revolutionize electronic devices and information technology.

• One of the key benefits of valleytronics in TMDCs is that it provides a new way of encoding information. Instead of using traditional bits (0 or 1), which only have two values, valleytronics allows for multiple valley states, thereby increasing the amount of information that can be stored and processed. In addition, valleytronics in TMDCs is a promising candidate for the development of low-power devices as it eliminates the need for high power consumption in order to manipulate the spin of electrons.

• Several important advancements have been made in the field of valleytronics in TMDCs in recent years, including the demonstration of valley-polarized currents in TMDCs and the development of valley-controlled transistors. These developments are likely to lead to the creation of new generations of high-speed and energy-efficient electronic devices in the near future.

• In conclusion, valleytronics in TMDCs is a rapidly developing field that has the potential to revolutionize the way we store and process information. The unique optical and electronic properties of TMDCs make them ideal candidates for valleytronics applications and are likely to play a major role in the development of next-generation electronic devices.